Process Developer (m/f/d) GaN Epitaxy

Siltronic is one of the world’s largest manufacturers of hyperpure silicon wafers and partner of many leading semiconductor companies. The company employs around 4,500 people. The company has a network of state-of-the-art production sites in Asia, Europe and the USA. Siltronic develops and manufactures silicon wafers in diameters of up to 300mm. These are the basis for modern microelectronics and nanoelectronics.

At our site in Burghausen or Freiberg, we are currently looking for a physicist (m/f/d) to enhance our compound semiconductor R&D team. Siltronic is developing a new semiconductor material based on Galllium Nitride on silicon epitaxial wafers which promises higher efficiencies and better performance for power and RF devices. Main task of this position is to support and to improve the GaN epitaxy process, apply advanced GaN wafer characterization methods and adapt the layer stack to different applications.

your tasks

  • Support MOCVD Process development of GaN/Si layer structures
  • Run and control GaN-on-Si epiwafer production, application of SPC techniques
  • Assist engineering team to troubleshoot and service MOCVD tool
  • Characterization of III-N Epiwafers (structural & electrical characterization)
  • Collaboration with customers and research partners

your profile

  • Master or PhD in physics, material science or electrical engineering
  • Background in compound semiconductor technologies
  • Experimental skills in epitaxy, most suitable experience in GaN/Si MOCVD deposition and experience with DOE and SPC
  • Knowledge in advanced material characterization (e.g. defect analysis, surface properties, using XRD, AFM, PL, etc.)
  • Commitment to the projects success and willingness to collaborate in an innovative R&D Team

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